This December, Sheryl Miles at Electronic Specifier takes a look at the top 5 power products released in December 2025.

PN-junction diodes often have a dropout voltageof approximately 1.2V for silicon power diodes.That voltage drop causes power diodes to dissipate considerablepower, resulting in a loss of efficiency in ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

The state-of-the-art topside cooling (GTPAK™) and gull-wing (GLPAK™) packages meet increased performance and robust environmental demands SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega ...

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This post sponsored by Texas Instruments. The UCC27524A device is a dual-channel, high-speed, low-side, gate-driver device capable of effectively driving MOSFET and IGBT power switches. The UCC27524A ...

In the last decade, the automotive electronics industry has been turned upside down. Twenty years ago, the power MOSFET was the predominant component in terms of both socket count and dollar value ...

High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...

The power transistor must be chosen to provide fast response while also withstanding high power dissipation. Several electrical and thermal characteristics must be considered: 1. An array of N current ...

The state-of-the-art topside cooling (GTPAK™) and gull-wing (GLPAK™) packages meet increased performance and robust environmental demands State-of-the-art topside cooling (GTPAK™) and gull-wing ...

In “MOSFET provides high power at low loss,” on the EDN Magazine web site this week, Camilo Quintáns Graña and Jorge Marcos Acevedo of Vigo University in Spain describe how to use a MOSFET as a ...